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ARPN Journal of Science and Technology >> Volume 7, Issue 1, January 2017

ARPN Journal of Science and Technology


A Comparative Study of Fractional Quantum Hall Effect in Monolayer and Bilayer Graphene

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Author S. Sahoo, A. K. Dutta
ISSN 2225-7217
On Pages 302-312
Volume No. 2
Issue No. 4
Issue Date May 01, 2012
Publishing Date May 01, 2012
Keywords Graphene, Landau level, Composite fermion, Fractional quantum Hall effect



Abstract

Monolayer and bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures. The relativistic nature of electrons in graphene modifies the interelectron interactions. The fractional quantum Hall effect (FQHE), a distinct signature of interacting electrons in the system, can be realized as a manifestation of the integer quantum Hall effect (IQHE) of composite fermions consists of electrons bound to an even number of flux quanta. In this paper, we comparatively study the FQHE in monolayer and bilayer graphene.


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