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ARPN Journal of Science and Technology >> Volume 7, Issue 1, January 2017

ARPN Journal of Science and Technology

Double Potentiostatic Deposition and Characterization of Cdin2se4 Semiconductor

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Author Y. Balladores, J. Márquez, Y. Martínez, O. P. Márquez, L. Manfredy, S. A. López-Rivera
ISSN 2225-7217
On Pages 439-446
Volume No. 4
Issue No. 8
Issue Date September 01, 2014
Publishing Date September 01, 2014
Keywords Pulsed synthesis of CdIn2Se4, Flat band potential, Band gap energy, Semiconductors, Photo electrochemistry.


CdIn2Se4 thin films have been synthesized by potentiostatic deposition from cadmium, indium, and selenium species after performing a voltammetric study on single, binary, and ternary mixtures of their precursor salts in aqueous acidic media. The electrochemical reaction steps were defined under different conditions and the obtained materials were identified and characterized by scanning electron microscopy, energy dispersion X-ray spectroscopy, X-ray diffraction, optical absorption spectroscopy, and electrochemical impedance spectroscopy (EIS). After optimizing several parameters, a highly pure CdIn2Se4 ternary semiconductor was synthesized by a double-pulse potentiostatic technique followed by annealing and recrystallization. Optical studies were carried out to obtain the absorption spectrum of the semiconductor and its direct band-gap energy (Eg) was found to be 1.73 eV. EIS measurements were performed to evaluate the flat band potential (Efb) of the material and a value of -0.468 V (vs. Ag/AgCl) was obtained. The presence of major negative carriers and the n-type nature of the semiconductor were also confirmed. Crystallographic lattice parameters confirming the a-phase of the semiconductor and the cluster size distribution of the deposit are also reported. The results support the incorporation of the synthesized semiconductor into solar photovoltaic cells.

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